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| ON Semiconductort Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC546 65 80 BC547 45 50 6.0 100 625 5.0 1.5 12 -55 to +150 BC548 30 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C BC546 BC546B BC547A BC547B BC547C BC548B BC548C 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W CASE 29-04, STYLE 17 TO-92 (TO-226AA) COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc) Emitter-Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125C) BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546/547/548 V(BR)CEO 65 45 30 80 50 30 6.0 6.0 6.0 -- -- -- -- -- -- -- -- -- -- -- -- -- 0.2 0.2 0.2 -- -- -- -- -- -- -- -- -- -- 15 15 15 4.0 V V(BR)CBO V V(BR)EBO V ICES nA A (c) Semiconductor Components Industries, LLC, 2001 1 May, 2001 - Rev. 3 Publication Order Number: BC546/D BC546 BC546B BC547A BC547B BC547C BC548B BC548C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) hFE BC547A BC546B/547B/548B BC548C BC546 BC547 BC548 BC547A BC546B/547B/548B BC547C/BC548C BC547A/548A BC546B/547B/548B BC548C VCE(sat) -- -- -- VBE(sat) VBE(on) 0.55 -- -- -- 0.7 0.77 -- 0.09 0.2 0.3 0.7 0.25 0.6 0.6 -- V V -- -- -- 110 110 110 110 200 420 -- -- -- 90 150 270 -- -- -- 180 290 520 120 180 300 -- -- -- 450 800 800 220 450 800 -- -- -- V -- (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (IC = 10 mA, IB = See Note 1) Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base-Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC546 BC547 BC548 Cobo Cibo hfe BC546 BC547/548 BC547A BC546B/547B/548B BC547C/548C NF BC546 BC547 BC548 -- -- -- 2.0 2.0 2.0 10 10 10 125 125 125 240 450 -- -- 220 330 600 500 900 260 500 900 dB 150 150 150 -- -- 300 300 300 1.7 10 -- -- -- 4.5 -- pF pF -- MHz Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, f = 1.0 kHz, f = 200 Hz) Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V. Figure 1. http://onsemi.com 2 BC546 BC546B BC547A BC547B BC547C BC548B BC548C BC547/BC548 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V Figure 1. Normalized DC Current Gain 2.0 TA = 25C 1.6 IC = 200 mA 1.2 0.8 0.4 0 IC = IC = IC = 50 mA 10 mA 20 mA IC = 100 mA 1.0 Figure 2. "Saturation" and "On" Voltages VCE , COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/ C) -55C to +125C 1.2 1.6 2.0 2.4 2.8 0.02 1.0 0.1 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 3. Collector Saturation Region 10 7.0 C, CAPACITANCE (pF) 5.0 3.0 Cob 2.0 Cib TA = 25C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 Figure 4. Base-Emitter Temperature Coefficient 100 80 60 40 30 20 0.5 0.7 1.0 VCE = 10 V TA = 25C 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 3 BC546 BC546B BC547A BC547B BC547C BC548B BC548C BC546 1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25C 2.0 1.0 0.5 0.2 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TA = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200 VBE @ VCE = 5.0 V Figure 7. DC Current Gain 2.0 TA = 25C 1.6 20 mA 1.2 0.8 0.4 0 IC = 10 mA 50 mA 100 mA 200 mA -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 Figure 8. "On" Voltage VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VB, TEMPERATURE COEFFICIENT (mV/ C) VB for VBE -55C to 125C 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) 50 100 200 Figure 9. Collector Saturation Region 40 TA = 25C C, CAPACITANCE (pF) 20 Cib Figure 10. Base-Emitter Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT 500 200 100 50 20 VCE = 5 V TA = 25C 10 6.0 4.0 Cob 2.0 0.1 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 4 BC546 BC546B BC547A BC547B BC547C BC548B BC548C PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- B K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V http://onsemi.com 5 BC546 BC546B BC547A BC547B BC547C BC548B BC548C Notes http://onsemi.com 6 BC546 BC546B BC547A BC547B BC547C BC548B BC548C Notes http://onsemi.com 7 BC546 BC546B BC547A BC547B BC547C BC548B BC548C ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 BC546/D |
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